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SiC MOSFET Discretes

Silicon Carbide (SiC) MOSFET offer outstanding high-frequency, high-voltage, and high-temperature performance. In power electronic systems, substituting traditional silicon IGBT devices with SiC MOSFET can increase the switching frequency of power circuits, improve system efficiency and power density, and reduce overall system costs. They are primarily suitable for applications in photovoltaic inverters, energy storage, industrial power supplies, new energy vehicles, motor drives, charging stations, and other fields.


MACMIC’s Silicon Carbide (SiC) MOSFET discretes are characterized by low switching losses, high operating junction temperatures, and low conduction resistance. These features ensure that the products possess sufficient robustness, delivering reliable performance in demanding applications.


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Display 1 Result

  • VDSS (V)
    • 1200

    Reset Filter

  • ID (A)
    • 50

    Reset Filter

  • RDS(on) (mΩ)
    • 40

    Reset Filter

  • QGD (nC)
    • 25

    Reset Filter

  • VGS,op (V)
    • -4/+18

    Reset Filter

  • Qrr (nC)
    • 430

    Reset Filter

  • Trr (ns)
    • 17.5

    Reset Filter

  • Tjmax
    • 175℃

    Reset Filter

  • Qualification
    • Industrial

    Reset Filter

  • Packages
    • TO-247-4L

    Reset Filter

Type
VDSS (V)
ID (A)
RDS(on) (mΩ)
QGD (nC)
VGS,op (V)
Qrr (nC)
Trr (ns)
Tjmax
Qualification
Packages
Filter
  • 1200

Reset Filter

Filter
  • 50

Reset Filter

Filter
  • 40

Reset Filter

Filter
  • 25

Reset Filter

Filter
  • -4/+18

Reset Filter

Filter
  • 430

Reset Filter

Filter
  • 17.5

Reset Filter

Filter
  • 175℃

Reset Filter

Filter
  • Industrial

Reset Filter

Filter
  • TO-247-4L

Reset Filter

1200 50 40 25 -4/+18 430 17.5 175°C Industrial TO-247-4L